Method for preparing display panel, display panel and display device

ABSTRACT

The present disclosure provides a method for preparing a display panel, a display panel and a display device including the same. The method includes: providing a transparent substrate; and preparing a display structure and a protective film layer covering the display structure on the transparent substrate, in which the preparing the display structure includes: forming a pixel unit array and a lead metal layer on the transparent substrate; and forming a laser barrier layer on a surface of the lead metal layer away from the transparent substrate, in which an orthogonal projection of the laser barrier layer on the transparent substrate partially covers that of the lead metal layer on the transparent substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims a priority to Chinese Patent Application No.201811531278.6 filed on Dec. 14, 2018, the disclosures of which areincorporated in their entirety by reference herein.

TECHNICAL FIELD

The present disclosure relates to the field of display technology, andin particular, to a method for preparing a display panel, a displaypanel and a display device including the same.

BACKGROUND

At present, in the preparation process of the display panel, a pluralityof display panels is usually prepared on a transparent substrate, andprotective films are attached on the upper surface and the lower surfaceof the substrate on which the plurality of display panels is formed,respectively. Then, the entire transparent substrate on which theplurality of display panels is formed is cut by a cutting process, toform a plurality of separate display panels. As for an organiclight-emitting diode (OLED) display device, since the transparentsubstrate of the OLED and the thin film transistor array is usually aflexible substrate made of a plastic material, and the protective filmis usually also made of a plastic material, the conventional glasscutting process cannot achieve cutting. Typically, a laser process isused to perform the above cutting steps.

SUMMARY

In one aspect, the present disclosure provides a method for preparing adisplay panel, including: providing a transparent substrate; andpreparing a display structure and a protective film layer covering thedisplay structure on the transparent substrate, in which the preparingthe display structure includes: forming a pixel unit array and a leadmetal layer on the transparent substrate; and forming a laser barrierlayer on a surface of the lead metal layer away from the transparentsubstrate, in which an orthogonal projection of the laser barrier layeron the transparent substrate partially covers that of the lead metallayer on the transparent substrate.

Optionally, the method for preparing the display panel further includes:laser-cutting the protective film layer at a target position on theprotective film layer, such that a slit is formed in the protective filmlayer at the target position, in which an orthogonal projection of thetarget position on a plane of the laser barrier layer is located withina range of the laser barrier layer; and separating a portion of theprotective film layer from the display structure by the slit, to exposeat least a portion of the lead metal layer.

Optionally, the method for preparing the display panel further includes:after the separating the portion of the protective film layer from thedisplay structure by the slit, separating the protective film layer fromthe display structure completely.

Optionally, a plurality of display structures is prepared on thetransparent substrate, and the method further includes: laser-cuttingalong an edge of each of the plurality of display structures, to obtaina plurality of display panels.

Optionally, the laser-cutting the protective film layer at the targetposition on the protective film layer includes: outputting a laser beamto a surface of the protective film layer; and moving the laser beamalong a target trajectory on a surface of the protective film layer, inwhich the target position is a position through which the laser beammoves along the target trajectory on the protective film layer.

Optionally, in a direction of a first edge of the lead metal layer, asize of the laser barrier layer is less than or equal to a size of thefirst edge; and in a direction of a second edge of the lead metal layer,a size of the laser barrier layer is 50 μm to 200 μm.

Optionally, the preparing the display structure further includes:forming a packaging layer on a surface of the pixel unit array away fromthe transparent substrate.

Optionally, a material of the packaging layer is same as a material ofthe laser barrier layer.

Optionally, the laser barrier layer includes a laser absorbing materialcapable of absorbing laser energy or a laser reflective material capableof reflecting laser beam.

Optionally, the laser barrier layer includes at least one selected forma group consisting of amorphous silicon (a-Si), silicon nitride(SiN_(x), 0<x<1), silicon oxide (SiO_(x), 1<x<2), silicon oxynitride(SiO_(x)N_(y), 1<x<2, 0<y<1), aluminum oxide (Al₂O₃), magnesium oxide(MgO), titanium dioxide (TiO₂), and zinc oxide (ZnO).

Optionally, in the preparing the display structure on the transparentsubstrate, the packaging layer and the laser barrier layer are formed bya single patterning process.

In another aspect, the present disclosure also provides a display panel,including a transparent substrate and a display structure arranged onthe transparent substrate, the display structure including a pixel unitarray and a lead metal layer, in which a laser barrier layer is arrangedon the lead metal layer, and an orthogonal projection of the laserbarrier layer on the transparent substrate partially covers that of thelead metal layer on the transparent substrate.

Optionally, in the above display panel, in a direction of a first edgeof the lead metal layer, a size of the laser barrier layer is less thanor equal to a size of the first edge; and in a direction of a secondedge of the lead metal layer, a size of the laser barrier layer is 50 μmto 200 μm.

Optionally, in the above display panel, the display structure furtherincludes a packaging layer on the pixel unit array, and a material ofthe packaging layer is same as a material of the laser barrier layer.

Optionally, in the above display panel, the laser barrier layer includesa laser absorbing material capable of absorbing laser energy or a laserreflective material capable of reflecting laser beam.

Optionally, in the above display panel, the laser barrier layer includesat least one selected form a group consisting of amorphous silicon(a-Si), silicon nitride (SiN_(x), 0<x<1), silicon oxide (SiO_(x),1<x<2), silicon oxynitride (SiO_(x)N_(y), 1<x<2, 0<y<1), aluminum oxide(Al₂O₃), magnesium oxide (MgO), titanium dioxide (TiO₂), and zinc oxide(ZnO).

Optionally, in the above display panel, the transparent substrate ismade of a flexible material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing the principle of laserhalf-cutting in a method for preparing a display panel according to anembodiment of the present disclosure.

FIG. 2 is a schematic diagram showing a display panel prepared in amethod for preparing a display panel according to an embodiment of thepresent disclosure.

FIG. 3 is a flow chart showing a method for preparing a display panelaccording to an embodiment of the present disclosure.

FIG. 4 is a schematic cross-sectional view showing a display panelprepared in a method for preparing a display panel according to anembodiment of the present disclosure.

FIG. 5 is a partial flow chart showing a method for preparing a displaypanel according to an embodiment of the present disclosure.

FIG. 6 is a schematic diagram showing an exemplary structure of a maskplate for preparing a laser barrier layer in a method for preparing adisplay panel according to an embodiment of the present disclosure.

FIG. 7 is a schematic diagram showing another exemplary structure of amask plate for preparing a laser barrier layer in a method for preparinga display panel according to an embodiment of the present disclosure.

FIG. 8 is a top plan view showing a display panel when half-cutting isperformed in a method for preparing a display panel according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

In order to illustrate the technical problems to be solved, technicalsolutions and advantages of the present disclosure more clearly, thetechnical solution of the present disclosure will be further describedin conjunction with the following drawings and the detailed description.

Laser cutting is to ablate the film layer to be cut by a laser source ofa specific wavelength, to achieve the purpose of cutting. The cuttingprocess in the process of preparing a flexible OLED display deviceincludes a full-cutting process and a half-cutting process. The fullcutting is to cut off the film layer of the part to be cut, to achievethe purpose of separation. The half cutting is to cut the film layer ofthe part to be cut or a part of film material, and remove the cut filmmaterial, to facilitate the subsequent testing. The half cutting processrequires the adjustment of the laser energy to achieve a suitable depthof cut, without affecting the adjacent fanout regions and lead metal.However, in the actual process operation, a contact film layer in thehalf-cutting process is very thin, resulting in a very small half-cutprocess window, and it is easy to damage the underlying metal electrodewith a little carelessness. Therefore, the half cutting processincreases the difficulty and cost of laser debugging, and the yield ofthe product is also affected.

An object of the technical solution of the present disclosure is toprovide a method for preparing a display panel for solving the problemthat when a part of the film material covered on the display panel iscut using a half-cutting process in the preparation of the displaypanel, the half-cut contact film layer is very thin, which easilydamages the underlying metal electrode; and the difficulty and cost oflaser debugging are relatively high, and the yield of the product isrelatively low. Further, the technical solution of the presentdisclosure provides a display panel prepared by the above method and adisplay device including the same, which have improved performance dueto the provision of a laser barrier layer.

According to an embodiment of the present disclosure, there is provideda method for preparing a display panel, including: providing atransparent substrate; and preparing a display structure and aprotective film layer covering the display structure on the transparentsubstrate, in which the step of preparing the display structureincludes: forming a pixel unit array and a lead metal layer on thetransparent substrate; and forming a laser barrier layer on a surface ofthe lead metal layer away from the transparent substrate, in which anorthogonal projection of the laser barrier layer on the transparentsubstrate partially covers that of the lead metal layer on thetransparent substrate.

The method for preparing the display panel according to an embodiment ofthe present disclosure may achieve the following advantageous technicaleffects: a lead metal layer is prepared by arranging a laser barrierlayer between a lead metal layer and a protective film layer, such thatwhen the protective film layer above the lead metal layer is subjectedto a laser half cutting, the laser cutting is prevented from damagingthe underlying metal electrode; and the difficulty and cost of laserdebugging in the half-cutting process are reduced, and the time of thehalf-cutting process is saved.

As shown in FIG. 1, in the preparation of the display panel, after thedisplay structure 20 is prepared on the transparent substrate 10, inorder to protect the prepared display structure 20, it is necessary toprepare a packaging layer 40 on the display structure 20 and attach aprotective film layer. The protective film layer includes a protectivefilm layer 30 covered on the packaging layer 40 and a lower protectivelayer (not shown in FIG. 1) attached to the surface of the transparentsubstrate 10 away from the display structure 20. Specifically, inconjunction with FIGS. 1 and 2, in the process of preparing a displaypanel, the prepared display structure 20 includes a pixel cell array 21and a lead metal layer 22. The arrangement region of the pixel unitarray 21 corresponds to the display region of the display panel, and thelead metal layer 22 is correspondingly arranged in the fanout region 1at the periphery of the display region, so that the pixel unit array 21is electrically connected to the pad 3 bound to the edge of the fanoutregion 1. After attaching the protective film layer 30 on the displaystructure 20, in order to facilitate subsequent testing, the protectivefilm layer 30 needs to be cut off by a laser half-cutting process, toremove the partial cut film layer. As shown in FIG. 1, it is necessaryto ensure that the lead metal layer 22 under the protective film layer20 cannot be broken in the process of cutting the protective film layer30, to avoid damaging the metal electrode.

Therefore, the laser half-cutting process in the process for preparingthe display panel requires the adjustment of the laser energy to achievea suitable depth of cut, without affecting the adjacent regions and leadmetal layer. In order to avoid the problem that the difficulty and costof laser debugging are relatively high and the underlying metalelectrode is easily damaged due to the half-cut contact film layer beingvery thin in the half-cutting process, an embodiment of the presentdisclosure provides the above method for preparing the display panel.

As shown in FIGS. 3 and 4, the method for preparing the display panelaccording to an embodiment of the present disclosure includes: S300,providing a transparent substrate; and S310, preparing a displaystructure 20 and a protective film layer 30 covering the displaystructure 20 on the transparent substrate 10, in which the preparing thedisplay structure 20 includes: forming a pixel unit array 21 and a leadmetal layer 22 on the transparent substrate 10; and forming a laserbarrier layer 50 on a surface of the lead metal layer 22 away from thetransparent substrate 10, in which an orthogonal projection of the laserbarrier layer 50 on the transparent substrate 10 partially covers thatof the lead metal layer 22 on the transparent substrate. That is, thelaser barrier layer 50 is prepared between the lead metal layer 22 andthe protective film layer 30 and located in a partial region above thelead metal layer 22.

In the method for producing the display panel according to an embodimentof the present disclosure, the lead metal layer 22 is protected by thelaser barrier layer 50 prepared between the lead metal layer 22 and theprotective film layer 30, such that when a laser half cutting isperformed on the protective film layer 30 above the lead metal layer 22,the laser cutting is prevented from damaging the underlying metalelectrode; and the difficulty and cost of laser debugging in thehalf-cutting process are reduced, and the time of the half-cuttingprocess is saved.

In the embodiment of the present disclosure, the number the displaystructure 20 prepared on the transparent substrate 10 may be one ormore. Each of the plurality of display structures 20 can be used to forma display panel, and the plurality of display structures 20 can beformed into a plurality of display panels after being separated bycutting. Optionally, the display structure 20 prepared on thetransparent substrate 10 is a structural unit having an image displayfunction, and includes a pixel unit array and a lead metal layerconnected to the pixel unit array. Optionally, as shown in FIG. 4, inthe embodiment of the present disclosure, the pixel unit array 21includes a thin film transistor array structure and a light emittinglayer for forming a display region of the OLED display panel.

Optionally, as shown in FIGS. 4, 5 and 8, the method for preparing adisplay panel of the embodiment of the present disclosure furtherincludes the following steps S320 and S330. Step S320, laser-cutting theprotective film layer 30 at a target position (position a) on theprotective film layer 30, such that a slit 52 is formed in theprotective film layer 30 at the target position, in which an orthogonalprojection of the target position on a plane of the laser barrier layer50 is located within a range of the laser barrier layer 50. S330,separating a portion of the protective film layer 30 from the displaystructure 20 by the slit 52, to expose at least a portion of the leadmetal layer 22

In the above preparation process, when the protective film layer 30above the lead metal layer 22 is subjected to a laser half cutting, thelaser barrier layer 50 prevents the laser cutting from damaging theunderlying metal electrode, thereby performing a surface protection onthe lead metal layer 22, reducing the difficulty and cost of laserprocess debugging, and saving process time.

Specifically, in step S310, the laser barrier layer 50 is preparedbetween the lead metal layer 22 and the protective film layer 30, and islocated in a partial region above the lead metal layer 22. The laserbarrier layer 50 is made of a laser absorbing material capable ofabsorbing laser energy, or the laser barrier layer 50 is made of a laserreflective material capable of reflecting laser beam.

As shown in FIG. 4, when the laser barrier layer 50 arranged between thelead metal layer 22 and the protective film layer 30 is made of a laserabsorbing material, and the laser beam 4 is incident from the protectivefilm layer 30 above the laser barrier layer 50, the laser absorbingmaterial is capable of absorbing the energy of the laser beam 4 incidentto the laser barrier layer 50. This weakens the laser energy, whichprevents the lead metal layer 22 from being damaged due to the laserbeing incident on the lead metal layer 22 through the laser barrierlayer 50. When the laser barrier layer 50 arranged between the leadmetal layer 22 and the protective film layer 30 is made of a laserreflective material, and the laser beam 4 is incident from theprotective film layer 30 above the laser barrier layer 50 to the laserbarrier layer 50, the laser reflective material is capable of reflectingthe laser beam. This avoids prevents the lead metal layer 22 from beingdamaged due to the laser being incident on the lead metal layer 22through the laser barrier layer 50, while the reflected laser beam isreflected back to the protective film layer 30, which can further assistthe cutting of the protective film layer 30.

Optionally, in an embodiment of the present disclosure, the laserbarrier layer includes at least one selected form a group consisting ofamorphous silicon (a-Si), silicon nitride (SiN_(x), 0<x<1), siliconoxide (SiO_(x), 1<x<2), silicon oxynitride (SiO_(x)N_(y), 1<x<2, 0<y<1),aluminum oxide (Al₂O₃), magnesium oxide (MgO), titanium dioxide (TiO₂),and zinc oxide (ZnO).

Optionally, in the method for preparing the display panel according toan embodiment of the present disclosure, after the preparation of thelead metal layer 22 is completed, the laser barrier layer 50 can beprepared by the mask plate 5 shown in FIG. 6 by means of one of thefollowing processes: plasma enhanced chemical vapor deposition (PECVD),atomic layer deposition (ALD), and physical vapor deposition (PVD).

Optionally, as shown in FIGS. 4 and 6, the opening 51 on the mask plate5 is used to deposit a laser barrier layer 50. The opening 51 isarranged along an edge (first edge) of the corresponding lead metallayer 22, and the size of the opening 51 along the edge is less than orequal to the size of the first edge; and in a direction of a second edgeof the lead metal layer 22, a size d of the opening 51 is 50 μm to 200μm. In a direction of a first edge of the lead metal layer, a size ofthe laser barrier layer 50 formed through the opening 51 is less than orequal to a size of the first edge; and in a direction of a second edgeof the lead metal layer 22, a size of the laser barrier layer 50 is 50μm to 200 μm. Optionally, as shown in FIG. 4, in an embodiment of thepresent disclosure, the extending direction of the second edge isparallel to the direction from the pixel unit array 21 to the lead metallayer 22, and the first edge is perpendicular to the second edge.

Optionally, as shown in FIGS. 4 and 7, the laser barrier layer 50 andthe packaging layer 40 are simultaneously formed in a single patterningprocess by a single mask plate 6. Optionally, the packaging layer 40 andthe laser barrier layer 50 may be formed by means of one of thefollowing processes: plasma enhanced chemical vapor deposition (PECVD),atomic layer deposition (ALD), and physical vapor deposition (PVD).

Specifically, as shown in FIG. 7, the opening 61 on the mask plate 6 isused to deposit a laser barrier layer 50, and the opening 62 on the maskplate 6 is used for deposition to form the packaging layer 40. The sizeof the opening 61 is the same as the size of the opening 51 in theembodiment of FIG. 6, and this will not be described in detail herein.

Optionally, the transparent substrate 10 of the embodiment of thepresent disclosure may be made of a flexible material. Optionally, thedisplay panel is a flexible OLED display panel. Optionally, the pixelunit array 21 prepared on the transparent substrate 10 includes a thinfilm transistor array structure and a light emitting layer.

Specifically, in conjunction with FIGS. 3-8, the method for preparingthe display panel according to the embodiment of the present disclosurespecifically includes the following steps 1)-8).

1) A polyimide material is coated on a transparent rigid carrier andcured to form a flexible transparent substrate 10.

2) An inorganic layer 70 is prepared on the transparent substrate 10.

3) On the inorganic layer 70, a thin film transistor array structure, anevaporated plated light-emitting layer, and a lead metal layer 22 areprepared, that is, the display structure 20 is prepared.

4) A packaging layer 40 is prepared above the thin film transistor arraystructure and the evaporated light-emitting layer, in which while thepackaging layer 40 is formed, a laser barrier layer 50 is formed on apartial region of the lead metal layer 22 simultaneously in a singlepatterning process by the mask plate 6 shown in FIG. 7.

Optionally, the packaging layer 40 and the laser barrier layer 50 mayalso be prepared separately in two separate processes. For example,after the packaging layer 40 is prepared separately, the laser barrierlayer 50 may be formed on a partial region of the mask plate 5 on thewiring metal layer 22 as shown in FIG. 5. It can be understood that, inorder to simplify the preparation process, when the display panel isprepared, usually a plurality of display panels is formed on onetransparent substrate 10 and then cut to form a plurality of separatedisplay panels.

5) A protective film is attached to the packaging layer 40, to preventthe package on the display structure 20 from being damaged outside.Specifically, the protective film includes a protective film layer 30attached to the thin film transistor array structure and above theevaporated light-emitting layer, and further include a lower protectivelayer 80 attached to the surface of the transparent substrate 10 awayfrom the display structure 20.

6) The protective film layer 30 is laser-cut at a target position(position a) on the protective film layer 30, such that a slit 52 isformed in the protective film layer 30 at the target position, in whichan orthogonal projection of the target position on a plane of the laserbarrier layer 50 is located within a range of the laser barrier layer50.

The laser-cutting the protective film layer 30 at the target position onthe protective film layer 30 includes: outputting a laser beam 4 to asurface of the protective film layer 30; and moving the laser beam 4along a target trajectory on a surface of the protective film layer 30,in which the target position is a position through which the laser beam4 moves along the target trajectory on the protective film layer 30.

7) The protective film layer 30 of the predetermined region is separatedfrom the display structure by the slit, to expose at least a portion ofthe lead metal layer 22. In the embodiment of the present disclosure,the trajectory of the laser beam 4 moving on the upper surface of theprotective film layer 30 may be a closed pattern for exposing a portionof the lead metal layer 22 for testing when the protective film layer 30is separated at the slit.

8) The protective film layer 30 outside the preset region is separatedfrom the display structure.

Based on the above steps, after the protective film layer 30 isseparated, the display panel and the display panel are cut to separate aplurality of separate display panels.

In an embodiment of the present disclosure, the packaging layer 40 andthe laser barrier layer 50 are formed by means of one of the followingprocesses: PECVD, ALD, and PVD. One skilled in the art should understandthe specific process of forming the packaging layer 40 and the laserbarrier layer 50 by the above processes, and this will not be describedin detail herein.

It should be understood that one skilled in the art should understandthe specific manner and method for preparing the above thin filmtransistor array structure, evaporated light-emitting layer and leadmetal layer 22, and the preparation process is not the research focus ofthe present disclosure, which will not be described in detail herein.

By using the method for preparing the display panel of the embodiment ofthe present disclosure, the laser barrier layer 50 prepared between thelead metal layer 22 and the protective film layer 30 serves to protectthe lead metal layer 22 from surface damage, prevent the laser cuttingfrom damaging the underlying metal electrode, reduce the difficulty andcost of laser debugging in the half-cutting process, and save processtime.

An embodiment of the present disclosure further provides a displaypanel, as shown in FIG. 4, including a transparent substrate 10, and apixel unit array and a lead metal layer 22 arranged on the transparentsubstrate 10, in which a laser barrier layer 50 is arranged above thelead metal layer 22, and an orthogonal projection of the laser barrierlayer 50 on the transparent substrate 10 partially covers that of thelead metal layer 22 on the transparent substrate.

Optionally, the laser barrier layer 50 is made of a laser absorbingmaterial capable of absorbing laser energy, or made of a laserreflective material capable of reflecting laser beam.

Optionally, the laser absorbing material includes at least one selectedform a group consisting of amorphous silicon (a-Si), silicon nitride(SiN_(x), 0<x<1), silicon oxide (SiO_(x), 1<x<2), silicon oxynitride(SiO_(x)N_(y), 1<x<2, 0<y<1), aluminum oxide (Al₂O₃), magnesium oxide(MgO), titanium dioxide (TiO₂), and zinc oxide (ZnO).

Optionally, in a direction of a first edge of the lead metal layer, asize of the laser barrier layer 50 formed is less than or equal to asize of the first edge; and in a direction of a second edge of the leadmetal layer 22, a size of the laser barrier layer 50 is 50 μm to 200 μm.

Optionally, the display panel further includes a packaging layer 40located above the pixel unit array. Optionally, the material of thepackaging layer 40 is same as the material of the laser barrier layer50.

Optionally, the transparent substrate is made of a flexible material.

An embodiment of the present disclosure further provides a displaydevice including the display panel of any of the above.

In the display panel and the display device according to an embodimentof the present disclosure, the laser barrier layer 50 arranged betweenthe lead metal layer 22 and the protective film layer 30 serves toprotect the lead metal layer 22 from surface damage, prevent the lasercutting from damaging the underlying metal electrode, reduce thedifficulty and cost of laser debugging in the half-cutting process, andsave process time.

What has been described above is an optional embodiment of the presentdisclosure. It should be noted that a number of modifications andamendments may be made by one skilled in the art without departing fromthe spirit and scope of the present disclosure, and such modificationsand amendments should also be considered to be within the scope of thepresent disclosure.

What is claimed is:
 1. A method for preparing a display panel,comprising: providing a transparent substrate; and preparing a displaystructure and a protective film layer covering the display structure onthe transparent substrate, wherein the preparing the display structurecomprises: forming a pixel unit array and a lead metal layer on thetransparent substrate; and forming a laser barrier layer on a surface ofthe lead metal layer away from the transparent substrate, wherein anorthogonal projection of the laser barrier layer on the transparentsubstrate partially covers that of the lead metal layer on thetransparent substrate.
 2. The method of claim 1, wherein the methodfurther comprises: laser-cutting the protective film layer at a targetposition on the protective film layer such that a slit is formed in theprotective film layer at the target position, wherein an orthogonalprojection of the target position on a plane of the laser barrier layeris located within a range of the laser barrier layer; and separating aportion of the protective film layer from the display structure by theslit, to expose at least a portion of the lead metal layer.
 3. Themethod of claim 2, wherein the method further comprises: after theseparating the portion of the protective film layer from the displaystructure by the slit, separating the protective film layer from thedisplay structure completely.
 4. The method of claim 1, wherein aplurality of display structures is prepared on the transparentsubstrate, and the method further comprises: laser-cutting along an edgeof each of the plurality of display structures, to obtain a plurality ofdisplay panels.
 5. The method of claim 2, wherein the laser-cutting theprotective film layer at the target position on the protective filmlayer comprises: outputting a laser beam to a surface of the protectivefilm layer; and moving the laser beam along a target trajectory on asurface of the protective film layer, wherein the target position is aposition through which the laser beam moves along the target trajectoryon the protective film layer.
 6. The method of claim 1, wherein in adirection of a first edge of the lead metal layer, a size of the laserbarrier layer is less than or equal to a size of the first edge; in adirection of a second edge of the lead metal layer, a size of the laserbarrier layer is 50 μm to 200 μm.
 7. The method of claim 1, wherein thepreparing the display structure further comprises: forming a packaginglayer on a surface of the pixel unit array away from the transparentsubstrate.
 8. The method of claim 7, wherein a material of the packaginglayer is same as that of the laser barrier layer.
 9. The method of claim1, wherein the laser barrier layer comprises a laser absorbing materialcapable of absorbing laser energy or a laser reflective material capableof reflecting laser beam.
 10. The method of claim 1, wherein the laserbarrier layer comprises at least one selected form a group consisting ofamorphous silicon (a-Si), silicon nitride (SiN_(x), 0<x<1), siliconoxide (SiO_(x), 1<x<2), silicon oxynitride (SiO_(x)N_(y), 1<x<2, 0<y<1),aluminum oxide (Al₂O₃), magnesium oxide (MgO), titanium dioxide (TiO₂),and zinc oxide (ZnO).
 11. The method of claim 8, wherein in thepreparing the display structure on the transparent substrate, thepackaging layer and the laser barrier layer are formed by a singlepatterning process.
 12. A display panel, comprising a transparentsubstrate and a display structure arranged on the transparent substrate,the display structure comprising a pixel unit array and a lead metallayer, wherein a laser barrier layer is arranged on the lead metallayer, and an orthogonal projection of the laser barrier layer on thetransparent substrate partially covers that of the lead metal layer onthe transparent substrate.
 13. The display panel of claim 12, wherein ina direction of a first edge of the lead metal layer, a size of the laserbarrier layer is less than or equal to a size of the first edge; and ina direction of a second edge of the lead metal layer, a size of thelaser barrier layer is 50 μm to 200 μm.
 14. The display panel of claim12, wherein the display structure further comprises a packaging layer onthe pixel unit array, and a material of the packaging layer is same asthat of the laser barrier layer.
 15. The display panel of claim 12,wherein the laser barrier layer comprises a laser absorbing materialcapable of absorbing laser energy or a laser reflective material capableof reflecting laser beam.
 16. The display panel of claim 12, wherein thelaser barrier layer comprises at least one selected form a groupconsisting of amorphous silicon (a-Si), silicon nitride (SiN_(x),0<x<1), silicon oxide (SiO_(x), 1<x<2), silicon oxynitride(SiO_(x)N_(y), 1<x<2, 0<y<1), aluminum oxide (Al₂O₃), magnesium oxide(MgO), titanium dioxide (TiO₂), and zinc oxide (ZnO).
 17. The displaypanel of claim 12, wherein the transparent substrate is made of aflexible material.
 18. A display device comprising the display panel ofclaim
 12. 19. The display device of claim 18, wherein the displaystructure further comprises a packaging layer arranged on the pixel unitarray, and a material of the packaging layer is same as that of thelaser barrier layer.
 20. The display device of claim 18, wherein thelaser barrier layer comprises a laser absorbing material capable ofabsorbing laser energy or a laser reflective material capable ofreflecting laser beam.